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| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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161115s2016 ne o 000 0 eng d |
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eng |
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962750671 |
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963793438 |
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964546214 |
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1002661765 |
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1010986215 |
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1042225571 |
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1083443911 |
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1083596698 |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
9780081003589 |
| Qualifying information |
(electronic bk.) |
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| International Standard Book Number |
0081003587 |
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(electronic bk.) |
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9780081003541 |
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0081003544 |
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(OCoLC)962823082 |
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(OCoLC)962750671 |
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(OCoLC)963793438 |
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(OCoLC)964546214 |
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(OCoLC)1002661765 |
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(OCoLC)1010986215 |
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(OCoLC)1042225571 |
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(OCoLC)1083443911 |
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(OCoLC)1083596698 |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER |
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TK7872.M3 |
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TEC |
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009070 |
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bisacsh |
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| Classification number |
621.38153 |
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23 |
| 245 00 - TITLE STATEMENT |
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| Title |
Materials and Processes for Next Generation Lithography. |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT) |
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| Place of publication, distribution, etc |
Amsterdam, Netherlands : |
| Name of publisher, distributor, etc |
Elsevier, |
| Date of publication, distribution, etc |
2016. |
| 300 ## - PHYSICAL DESCRIPTION |
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| Extent |
1 online resource. |
| 505 0# - |
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| Formatted contents note |
Front Cover; Frontiers of Nanoscience: Materials and Processes for Next Generation Lithography; Frontiers of Nanoscience; Frontiers of Nanoscience: Materials and Processes for Next Generation Lithography; Copyright; Contents; Contributors; Preface; Acknowledgments; List of abbreviations; 1 -- Overview of materials and processes for lithography; 1.1 INTRODUCTION; 1.2 OVERVIEW OF LITHOGRAPHY PROCESS; 1.3 LITHOGRAPHIC EXPOSURE SOURCES AND PROCESSES; 1.3.1 Ultraviolet Lithography; 1.3.2 DUV Lithography-248nm and 193nm, Immersion, and Multiple Patterning; 1.3.3 Extreme Ultraviolet Lithography. |
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| Formatted contents note |
1.3.4 E-Beam Lithography1.3.5 Other Lithography Processes-Ion Beam, Scanning Probe, and Nanoimprint; 1.4 CHARACTERIZATION AND FIGURES OF MERIT FOR RESISTS; 1.5 RESIST MATERIALS AND CHEMISTRY; 1.5.1 Nonchemically Amplified Resists; 1.5.2 Chemically Amplified Resists; 1.5.3 Resist Physical Properties and Etch Resistance; 1.5.4 Photoacid Generator Chemistry and Physics; 1.5.5 Molecular Resists and Inorganic Resists; 1.6 CHALLENGES IN MODERN RESIST DESIGN; 1.6.1 Exposure Statistics and Shot Noise; 1.6.2 Photoacid Diffusion; 1.6.3 Resolution, Line Edge Roughness, and Sensitivity Trade-off. |
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| Formatted contents note |
1.6.4 Pattern Collapse1.7 CONCLUSIONS; REFERENCES; 2 -- Molecular excitation and relaxation of extreme ultraviolet lithography photoresists; 2.1 INTRODUCTION; 2.2 EXTREME ULTRAVIOLET MOLECULAR EXCITATION; 2.2.1 Atomic Photoemission; 2.2.2 Extreme Ultraviolet Sensitivity; 2.2.3 Gas-Phase Molecular Spectroscopy; 2.2.4 Molecular Photoemission; 2.2.5 Photoemission and Shake-Up; 2.2.6 Molecular Shape Resonances; 2.3 EXTREME ULTRAVIOLET MOLECULAR RELAXATION; 2.3.1 Electronic Relaxation in Atoms; 2.3.2 Resonant Photoabsorption; 2.3.3 Atomic Relaxation and Fragmentation in Molecules. |
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| Formatted contents note |
2.4 EXTREME ULTRAVIOLET PROCESSES IN CONDENSED FILMS2.4.1 Extreme Ultraviolet Molecular Excitation in Condensed Resist Films; 2.4.2 Molecular Relaxation in Condensed Films; 2.4.3 Reaction Cascades in Condensed Films; 2.5 OUTLOOK AND CONCLUSIONS; 2.5.1 Differences in Extreme Ultraviolet Lithography and Electron Beam Lithography; 2.5.2 Outlook and Research Needs; Acknowledgments; REFERENCES; 3 -- Theory: electron-induced chemistry; 3.1 INTRODUCTION; 3.2 MECHANISMS FOR ELECTRON-INDUCED REACTIONS; 3.2.1 Electron Attachment; 3.2.2 Electron Impact Ionization; 3.2.3 Electron Impact Excitation. |
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| Formatted contents note |
3.3 POTENTIAL ROLE IN LITHOGRAPHY3.3.1 Cross Section; 3.3.2 Spatial Resolution; 3.3.3 Rational Design of Novel Materials; 3.4 CONCLUSIONS; REFERENCES; 4 -- EUV lithography process challenges; 4.1 INTRODUCTION; 4.2 EUV-IL AS A CHARACTERIZATION AND NANOPATTERNING TOOL; 4.2.1 Extreme Ultraviolet Interference Lithography; 4.2.2 Achromatic Diffraction Grating-Based EUV-IL; 4.2.3 EUV-IL Challenges; 4.2.4 Achromatic Talbot Lithography; 4.3 RESIST MATERIAL CHALLENGES; 4.3.1 Introduction to Chemically Amplified Resists; 4.3.2 RLS Tradeoff; 4.3.3 Resist Absorption; 4.3.4 Image Blur. |
| 650 #0 - |
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| Topical term or geographic name as entry element |
Microlithography. |
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| Topical term or geographic name as entry element |
Photoresists. |
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| Topical term or geographic name as entry element |
TECHNOLOGY & ENGINEERING |
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| Topical term or geographic name as entry element |
Microlithography. |
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| Topical term or geographic name as entry element |
Photoresists. |
| 700 1# - |
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| Personal name |
Robinson, Alex, |
| Relator term |
editor. |
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| Personal name |
Lawson, Richard, |
| Relator term |
editor. |
| 856 40 - |
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| Uniform Resource Identifier |
http://www.sciencedirect.com/science/bookseries/18762778/11 |
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text |
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txt |
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rdacontent |
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computer |
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rdamedia |
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online resource |
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cr |
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rdacarrier |
| 490 1# - |
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Frontiers of nanoscience, |
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1876-2778 ; |
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v. 11 |
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Mechanical. |
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bisacsh |
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fast |
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(OCoLC)fst01019883 |
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fast |
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(OCoLC)fst01062099 |
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Electronic books. |
| 776 08 - |
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Print version: |
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Materials and Processes for Next Generation Lithography. |
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Amsterdam, Netherlands : Elsevier, 2016 |
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9780081003541 |
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0081003544 |
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(OCoLC)950449855 |
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Frontiers of nanoscience ; |
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v. 11. |
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ScienceDirect |
